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Agarwal, Harshit
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Agarwal, Harshit
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Agarwal, H.
Agarwal H.
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3 results
Now showing 1 - 3 of 3
- PublicationBSIM compact model of quantum confinement in advanced nanosheet FETs(2020-02-01)
;Dasgupta, Avirup ;Parihar, Shivendra Singh ;Kushwaha, Pragya; ;Kao, Ming Yen ;Salahuddin, Sayeef ;Chauhan, Yogesh SinghHu, ChenmingWe propose a compact model for nanosheet FETs that take the effects of quantum confinement into account. The model captures the nanosheet width and thickness dependence of the electrostatic dimension, density of states, effective mass, subband energies, and threshold voltages and includes them in the charge calculation, resulting in an accurate terminal charge and current characteristics. The model has been implemented using Verilog-A in the BSIM-CMG framework for all simulations. It has been validated with band-structure calculation-based TCAD simulations as well as measured data. We have also highlighted the significance of quantum mechanical effects on analog and RF performance of the device.Scopus© Citations 38 - PublicationBSIM-IMG: Advanced Model for FDSOI Transistors with Back Channel Inversion(2020-04-01)
; ;Kushwaha, P. ;Dasgupta, A. ;Y-Kao, M. ;Morshed, T. ;Workman, G. ;Shanbhag, K. ;Li, X. ;Vinothkumar, V. ;Chauhan, Y. S. ;Salahuddin, S.Hu, C.FDSOI devices are prominently used in low power circuits and high frequency domains due to their superior RF and analog performance, thanks to back-bias capability and relatively ease of transistor design over FinFETs and planar bulk transistors. BSIM-IMG is the industry standard compact model for simulating FDSOI devices. In this work, we will discuss recent enhancements made in the BSIM-IMG model for accurate modeling of the FDSOI transistors. The back gate inversion is more physically modeled in the latest BSIM-IMG model. We will present a new 1/f noise model, which is validated with the experimental data. Improved output conductance, mobility and gate current models are also discussed. All the enhancements are done in such a way that benchmark RF figure of merit are met.Scopus© Citations 12 - PublicationCompact Model for Geometry Dependent Mobility in Nanosheet FETs(2020-03-01)
;Dasgupta, Avirup ;Parihar, Shivendra Singh; ;Kushwaha, Pragya ;Chauhan, Yogesh SinghHu, ChenmingWe propose an updated compact model for mobility in Nanosheet FETs. This is necessary since Nanosheet FETs exhibit significant mobility degradation with thickness and width scaling caused by centroid shift, changing effective mass due to quantum confinement as well as various crystal orientations of the various conduction planes. The model takes all of these effects into account. It has been implemented in Verilog-A and validated with experimental data. To the best of our knowledge, this is the first compact model capturing the effect of nanosheet scaling on mobility.Scopus© Citations 20