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Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb<inf>2</inf>O<inf>5</inf> gate dielectric
Journal
Physica Scripta
ISSN
00318949
Date Issued
2023-01-01
Author(s)
Bhardwaj, Navneet
Upadhyay, Bhanu B.
Parvez, Bazila
Pohekar, Prachi
Yadav, Yogendra
Sahu, Arpit
Patil, Mahalaxmi
Basak, Subhajit
Sahu, Jyoti
Sabiha, Farheen Shamim Ahmed
Ganguly, Swaroop
Saha, Dipankar
Abstract
This work demonstrates the improvement in DC and RF characteristics and a reduction in the gate leakage current for thermally grown Nb2O5 as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high electron-mobility transistors (MOS-HEMTs). The MOS-HEMTs with an amorphous 10 nm thick Nb2O5 as the gate dielectric show a reduced gate leakage current of 10−9 A mm−1. Nb2O5 thin film creates a tensile strain in the AlGaN layer, enhancing the density of two-dimension electron gas (2-DEG). The performance of the device also improves in terms of saturation drain current, peak transconductance, subthreshold swing, and unity current gain frequency. An increase in the source-to-drain ON/OFF current ratio to 108 and a significant reduction in the subthreshold leakage current by at least two orders of magnitude are measured compared to the control HEMTs.
Volume
98
Subjects