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Post Deposition Annealing Temperature Optimization for Sol-gel Spray-coated SiO<inf>2</inf>Film for P-type Cz Si Surface Passivation
Journal
2020 5th IEEE International Conference on Emerging Electronics, ICEE 2020
Date Issued
2020-01-01
Author(s)
Bhajipale, Jayshree
Kottantharayil, Anil
Abstract
Sol-gel SiO2 film is deposited via low-temperature spray-coating technique using a custom-designed spray-coater tool. Spray-coated film has been subjected to post deposition annealing (PDA) in O2 ambient. Effect of PDA temperature on the electrical properties of the SiO2 film is studied by fabricating MOS capacitors. Optimization of PDA temperature is performed in terms of interface state density ($\mathrm{D}_{it}$), fixed oxide charge density ($\mathrm{Q}_{f}$) and leakage current density ($\mathrm{J}_{leak}$). The temperature is optimized to 650°C at which $\mathrm{D}_{it},\ \mathrm{Q}_{f}$, and $\mathrm{J}_{leak}$ in the range of $2.0 - 6.0\times 10^{10}\ \text{cm}^{-2}\text{eV}^{-1},\ 3.9-6.5\times 10^{11} \text{cm}^{-2}$, and $1.12-3.96\times 10^{-8}\ \mathrm{A}\ \text{cm}^{-2}$, respectively are achieved. At 650°C, the best $\mathrm{D}_{it}$ obtained is $2.0\times 10^{10}\ \text{cm}^{-2}\text{eV}^{-1}$, which lies at an energy level of 0.263 eV from valence band edge in the bandgap. Passivation study performed at this optimized temperature gives surface recombination velocity of 8 cm sec-1 on p type Cz Si substrate.
Subjects