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Rapid LUT Modelling Technique for GaN HEMT Based MMIC Technology
Journal
2021 IEEE MTT-S International Microwave and RF Conference, IMARC 2021
Date Issued
2021-01-01
Author(s)
Chandra, Prabhanshu
Saini, Ritij
Jha, Jaya
Yadav, Yogendra
Mukherjee, Sudipta
Gandhi, R.
Laha, Ranjay
Pedapati, Nageswararao
Balasekhar, Dasari
Das, Arijit
Saha, Dipankar
Ganguly, Swaroop
Abstract
High frequency power applications such as radar, terrestrial and space communications, and signal jamming are increasingly adopting GaN devices. RF GaN market growth is driven significantly by 5G today. This paper describes the modelling approaches used for GaN based devices and associated RF passives for an MMIC technology which can be used by circuit designers to quickly model newly fabricated devices. It presents a look-up table based approach for modelling the GaN device and a semi-empirical approach to model the RF passives. A class-A broadband power amplifier has also been presented to verify and show the utility of the model.
Subjects