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Through-substrate vias based three-dimensional interconnection technology
Journal
Handbook of Silicon Based MEMS Materials and Technologies
Date Issued
2020-01-01
Author(s)
Dixit, Pradeep
Kannojia, Harindra Kumar
Henttinen, Kimmo
Abstract
An overview of the through-substrate vias (TSVs), the associated fabrication techniques and their applications in MEMS and electronic packaging have been presented in this chapter. TSVs are being used in interconnection and 3-D packaging of micro-electro-mechanical-systems (MEMS) and electronic devices. The main advantages of the TSVs in interconnection applications are improved signal speed and device performance with reduced overall package area. TSVs have been successfully implemented in various applications like CMOS image sensors, flash memory stacking, and wafer-level packaging of MEMS inertial sensors. Through-substrate vias have been demonstrated both in silicon (through-silicon vias) as well as fused silica/glass substrates (through-glass vias). This chapter describes the existing fabrication techniques to make TSVs. The recent advances in the fabrication processes of the TSVs are also summarized to acquaint the readers with the ongoing research activities in the TSV domain.
Subjects