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Investigation of Dielectric and Quantum Confinement Based Dopant Deactivation in the Extension Region of FinFET
Journal
IEEE Electron Device Letters
ISSN
07413106
Date Issued
2022-08-01
Author(s)
Saurabh, Nishant
Patil, Shubham
Rawat, Amita
Chiarella, Thomas
Parvais, Bertrand
Ganguly, Udayan
Abstract
Spacers with low dielectric constant have been significantly explored in the literature to reduce delay due to the parasitic capacitance. However, it substantially increases parasitic resistance due to Dielectric and Quantum Confinement based Dopant Deactivation (DQC-DD). In this letter, we have investigated the experimental signature of DQC-DD in the extension region of the FinFET and observed a significant reduction in the ON current due to it. Hence, it is essential to include DQC-DD into the simulation of FinFET, particularly those with narrow fin width, for the correct prediction of delay following the experiment.
Volume
43
Subjects