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Decoupling of NBTI and Pure HCD Contributions in p-GAA SNS FETs Under Mixed V<inf>G</inf>/V<inf>D</inf>Stress
Journal
IEEE International Reliability Physics Symposium Proceedings
ISSN
15417026
Date Issued
2022-01-01
Author(s)
Choudhury, Nilotpal
Ranjan, Ayush
Mahapatra, Souvik
Abstract
Ultrafast measurements (with 10μs delay) are done to characterize the Negative Bias Temperature Instability (NBTI) and Hot Carrier Degradation (HCD) induced threshold voltage shift (ΔVT) in p-channel Gate All Around Stacked Nano-Sheet (GAA-SNS) Field Effect Transistors (FETs). A model framework is proposed to estimate the measured ΔVT time kinetics during and after NBTI and HCD stress. The BTI Analysis Tool (BAT) framework is calibrated using pure NBTI data (drain bias, VD, at 0V) across gate bias (VG) and temperature (T) and is subsequently used to estimate the underlying NBTI contribution during and after HCD stress under full VG/VD space in the presence of Self-Heating (SH) effect. The pure HCD kinetics is calculated using an empirical model, with VG, VD and T dependence incorporated via a vertical field enhanced dominant energy model.
Volume
2022-March
Subjects