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Low-temperature solution-processed high-capacitance AlO<inf>x</inf> dielectrics for low-voltage carbon-based transistors
Journal
Organic Electronics
ISSN
15661199
Date Issued
2022-11-01
Author(s)
Kumar, Ashwini
Perinot, Andrea
Sarkar, Sudipta Kumar
Gupta, Dipti
Zorn, Nicolas F.
Zaumseil, Jana
Caironi, Mario
Abstract
Low-temperature processing of high-capacitance metal oxide-based dielectrics by solution-based methods and their application in developing low-voltage carbon-based transistors may enable next-generation low-cost, power-efficient, flexible and transparent electronics. In this work, a high-capacitance AlOx film was developed at a relatively low annealing temperature of ⁓200 °C from its spin-coated precursor solution. Its application in both low-voltage n-as well as p-channel field-effect transistors (FETs) was demonstrated, gaining feedback on microstructure and dielectric properties by using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, as well as impedance and current-voltage measurements. The operating voltage of both n-channel FETs based on a semiconducting polymer as well as p-channel FETs with polymer-sorted semiconducting (6,5) single-walled carbon nanotube (s-SWCNT) networks was found to be within 1.5 V range. This work demonstrates the viability of low-temperature AlOx dielectrics in low-voltage carbon-based electronics towards low-power distributed, portable and wearable applications.
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