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Improvement of crystal quality and surface morphology of Ge/Gd<inf>2</inf>O<inf>3</inf>/Si(111) epitaxial layers by cyclic annealing and regrowth
Journal
Journal of Physics D: Applied Physics
ISSN
00223727
Date Issued
2022-03-17
Author(s)
Nanwani, Alisha
Pokharia, Ravindra Singh
Schmidt, Jan
Osten, H. J.
Mahapatra, Suddhasatta
Abstract
The role of post-growth cyclic annealing (PGCA) and subsequent regrowth, on the improvement of crystal quality and surface morphology of (111)-oriented Ge epitaxial layers, grown by low temperature (300 °C) molecular beam epitaxy on epi-Gd2O3/Si(111) substrates, is reported. We demonstrate that PGCA is efficient in suppressing rotational twins, reflection microtwins and stacking faults, the predominant planar defect types in Ge(111) epilayers. Continuing Ge growth after PGCA, both at low (300 °C) and high (500 °C) temperatures, does not degrade the crystal quality any further. By promoting adatom down-climb, PGCA is observed to also heal the surface morphology, which is further improved on Ge re-growth. These results are promising for development of high-quality Ge(111) epitaxial layers for photonic and electronic applications.
Subjects