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Electrostatic Engineering of β-Ga<inf>2</inf>O<inf>3</inf>Trench Metal-Insulator-Semiconductor Schottky Barrier Diodes Using a Bilayer Dielectric Stack
Journal
IEEE Transactions on Electron Devices
ISSN
00189383
Date Issued
2022-10-01
Author(s)
Lengare, Ravikiran
Joishi, Chandan
Lodha, Saurabh
Abstract
We predict improved electrostatic fields in a β-Ga2O3trench metal-insulator-semiconductor (MIS) Schottky barrier diode (SBD) by integrating a bilayer dielectric as the insulator layer. The bilayer leverages the benefits offered by a high-K/low-K dielectric arrangement to obtain lower gate leakage as well as alleviated peak fields compared with a stand-alone dielectric insulator. Through detailed 2-D simulations of geometrically optimized MIS trench SBDs, electrostatic engineering of the bilayer dielectric device is performed to predict better breakdown characteristics and the initiation of impact ionization, which is a measure of the intrinsic capability of the material, at comparatively higher doping of the drift layer, as well as a higher power figure-of-merit (FoM; ≈4 GW/cm2) compared with single-layer dielectric insulators.
Volume
69
Subjects