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Modeling Time and Bias Dependence of Classical HCD Mechanism (Peak I<inf>SUB</inf>Stress) in n-MOSFETs
Journal
IEEE International Reliability Physics Symposium Proceedings
ISSN
15417026
Date Issued
2022-01-01
Author(s)
Diwakar, Himanshu
Thakor, Karansingh
Mahapatra, Souvik
Abstract
Time and drain bias dependence of HCD under peak ISUB (VG ~ VD/2) stress are modeled. Published n-MOSFET data for different LCH (2.0μm to 37nm), TOX (35nm to 1.85nm), type of junction (HDD, LDD/HDD, SDE/HDD) and stress VD (8V to 1.6V) are analyzed. A compact model is used to model the time kinetics and to explain its difference (i.e., power law or non-power law) in devices having different types of junctions. The dominant energy model is used for VD dependence, and the model parameters are obtained with scaling. The time kinetics and VD dependence are also modeled using TCAD simulations.
Volume
2022-March
Subjects