Effect of Polarisation on Optical Gain of InGaN/GaN Quantum Wells

Journal
2022 International Conference Laser Optics, ICLO 2022 - Proceedingss
Date Issued
2022-01-01
Author(s)
Udai, Ankit
Aggarwal, Tarni
Pendem, Vikas
Ganguly, Swaroop
Saha, Dipankar
DOI
Abstract
III-nitride semiconductors are crucial for solid-state lighting applications, especially in the blue and ultraviolet regions. They have polarisation fields and charges inside them which modify their optoelectronic properties. In this article, we study the effect of the polarisation fields on the band structure and optical gain of an InGaN/GaN quantum well.
Subjects