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Collector-Emitter Voltage Based Health Monitoring of Bond Wire in IGBT at Low Gate Voltage
Journal
2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
Date Issued
2022-01-01
Author(s)
Kumar, Pankaj
Arya, Abhinav
Chanekar, Abhishek
Deshmukh, Pratik
Anand, Sandeep
Abstract
Online health monitoring of the IGBT in power converters of electric vehicles (EVs) is necessary to enhance the system reliability. On-state collector emitter voltage, VCE is a commonly used health sensitive parameter (HSP) of bond wire degradation in IGBT. However, its low sensitivity with bond wire degradation makes it difficult to accurately estimate the health of bond wire. This paper proposes a health monitoring technique of bond wire degradation in IGBT by using the HSP, collector-emitter voltage in saturation region at low gate voltage (VCES,L). The improved sensitivity of VCES,L with bond wire degradation allows the accurate monitoring of the bond wire health. The mathematical analysis on the sensitivity of VCES,L is presented in this paper. The criteria of low gate voltage selection to determine VCES,L for the proposed scheme is also discussed. Further, the effect of junction temperature on VCES,L value is suitably taken care of in order to represent the bond wire health correctly. Finally, the effectiveness of proposed technique is experimentally validated on an inverter prototype which is developed in the laboratory.
Subjects